A recent report by Transparency Market Research, titled “Power GaN Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 – 2024” presents a detailed analysis of the market from a global perspective. According to the report, the power GaN market is expected to rise considerably due to the increase in use of gallium nitride in the form of a wide band gap semiconductor material. This is due to the significant advantages offered by gallium nitride (GaN) as compared to other semiconductor devices that use gallium arsenide (GaAS) and silicon carbide (SiC). These advantages are mainly with respect to efficiency, weight and size, and thermal performance.
Globally, GaN is often being considered as the next generation semiconductor for powering applications, as per the report published by TMR. This reason has led to the increasing adoption of GaN-based semiconductors in several parts of the world, thus being its significant driver.
According to the report, GaN semiconductors are used in numerous applications such as information and military, automobiles, defense sectors, aerospace, power distribution systems, communication technology systems, and many others. GaN also finds application in light emitting diodes, power electronics, and in devices that operate on radio frequencies. This applications are entirely possible due to the ability of GaN to operate at high frequency and temperatures. The increasing number of applications to serve high temperature and frequency operations is often considered as a primary fueling factor for the power GaN market, as discussed in the report.
As per the TMR report, technological developments and adoption of novel production techniques for the production of gallium nitride have opened growth avenues in the power GaN market. This has aroused the interest of new players to enter in this market. . New market entrants are striving to manufacture GaN-based semiconductors that not only offer superior performance, but are cost-effective. These devices are extensively used in radio frequency amplifiers, LEDs, and high voltage applications. , Given the scenario, the demand for GaN devices is likely to increase acrossvarious industry sectors.
From a regional perspective, the global power GaN market is segmented into five regions: North America, Asia-Pacific, Middle East and Africa, Europe and Latin America. Among these regions, the market for GaN industrial devices in North America holds dominance at a global level. This is mainly because of substantial innovation and development of products taking place in North American countries such as the U.S and Canada. Numerous semiconductor devices are manufactured in these countries, not only for a commercial use but also for military purposes.
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On account of rapid economic growth witnessed in many of these countries, companies and investors are coming forward to invest in the power GaN market. This has resulted in several prominent players to exhibit significant hold in the market. Some of the key companies operating in the power GaN market are: Freescale Semiconductor Inc (USA), International Rectifier (USA), Fujitsu Limited (Japan), and Renesas Electronics Corporation (Japan), amongst others.
The TMR report extensively covers several aspects of the power GaN market. A lot of focus in this report is given on market trends, futuristic opportunities, prominent segments, market dynamics and the industry size, competitive scenario, and forecasts for the next few years. All these factors can provide a detailed analysis of the market has been made possible by TMR analysts by carefully researching all the associated factors.
Some other vital aspects covered in the report are: technological innovations, shares of leading players in the market, stakeholder analysis and strategies executed by top competitors, and value chain analysis. The report has been compiled by using primary as well as secondary research data.